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DG417/418/419
Vishay Siliconix
Precision CMOS Analog Switches
FEATURES
D D D D D D D "15-V Analog Signal Range On-Resistance--rDS(on): 20 W Fast Switching Action--tON: 100 ns Ultra Low Power Requirements--PD:35 nW TTL and CMOS Compatible MiniDIP and SOIC Packaging 44-V Supply Max Rating
BENEFITS
D Wide Dynamic Range D Low Signal Errors and Distortion D Break-Before-Make Switching Action D Simple Interfacing D Reduced Board Space D Improved Reliability
APPLICATIONS
D D D D D D Precision Test Equipment Precision Instrumentation Battery Powered Systems Sample-and-Hold Circuits Military Radios Guidance and Control Systems D Hard Disk Drives
DESCRIPTION
The DG417/418/419 monolithic CMOS analog switches were designed to provide high performance switching of analog signals. Combining low power, low leakages, high speed, low on-resistance and small physical size, the DG417 series is ideally suited for portable and battery powered industrial and military applications requiring high performance and efficient use of board space. high voltage silicon gate (HVSG) process. Break-before-make is guaranteed for the DG419, which is an SPDT configuration. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off.
To achieve high-voltage ratings and superior switching performance, the DG417 series is built on Vishay Siliconix's
The DG417 and DG418 respond to opposite control logic levels as shown in the Truth Table.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG417
Dual-In-Line and SOIC S NC GND V+ 1 2 3 4 Top View 8 7 6 5 D V- 0 IN VL 1 ON OFF OFF ON
TRUTH TABLE
Logic DG417 DG418
Logic "0" = v 0.8 V, Logic "1" = w 2.4 V
DG419
Dual-In-Line and SOIC D S1 GND V+ 1 2 3 4 Top View 8 7 6 5 S2 V- IN VL
TRUTH TABLE
Logic
0 1
DG419
SW2
OFF ON
SW1
ON OFF
Logic "0" = v 0.8 V, Logic "1" = w 2.4 V
Document Number: 70051 S-52433--Rev. E, 06-Sep-99
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DG417/418/419
Vishay Siliconix
ORDERING INFORMATION
Temp Range DG417/418
8-Pin Plastic MiniDIP -40 to 85 C 40 85_C 8-Pin Narrow SOIC DG417DJ DG418DJ DG417DY DG418DY DG417AK, DG417AK/883, 5962-90701MPA DG418AK, DG418AK/883, 5962-90702MPA
Package
Part Number
-55 to 125_C
8-Pin CerDIP
DG419
-40 to 85_C -55 to 125_C 8-Pin Plastic MiniDIP 8-Pin Narrow SOIC 8-Pin CerDIP DG419DJ DG419DY DG419AK, DG419AK/883, 5962-90703MPA
NOTE: SMD product is dual marked with /883 number.
ABSOLUTE MAXIMUM RATINGS
Voltages Referenced to V- V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND -0.3 V) to (V+) + 0.3 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V-) -2 V to (V+) + 2 V or 30 mA, whichever occurs first Current, (Any Terminal) Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Current (S or D) Pulsed 1 ms, 10% duty cycle . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature (AK Suffix) . . . . . . . . . . . . . . . . . . -65 to 150_C (DJ, DY Suffix) . . . . . . . . . . . . . . -65 to 125_C Power Dissipation (Package)b 8-Pin Plastic MiniDIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW 8-Pin Narrow SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW 8-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/_C above 75_C d. Derate 6.5 mW/_C above 75_C e. Derate 12 mW/_C above 75_C
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
S VL V- VIN Level Shift/ Drive V+ GND D
V-
FIGURE 1.
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Document Number: 70051 S-52433--Rev. E, 06-Sep-99
DG417/418/419
Vishay Siliconix
SPECIFICATIONSa
Test Conditions Unless Otherwise Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) IS(off) Switch S i h Off Leakage Current V+ = 16.5 V, V- = -16.5 V 16 5 V V 16 5 VD = #15.5 V VS = "15.5 V DG417 DG418 DG419 DG417 DG418 DG419 IS = -10 mA, VD = "12.5 V V+ = 13.5 V, V- = -13.5 V Full Room Full Room Full Room Full Room Full Room Full Room Full 20 -0.1 -0.1 -0.1 -0.4 -0.4 -0.25 -20 -0.25 -20 -0.75 -60 -0.4 -40 -0.75 -60 -15 15 35 45 0.25 20 0.25 20 0.75 60 0.4 40 0.75 60 -0.25 -5 -0.25 -5 -0.75 -12 -0.4 -10 -0.75 -12 -15 15 35 45 0.25 5 0.25 5 0.75 12 0.4 10 0.75 12 nA A V W
A Suffix
-55 to 125_C
D Suffix
-40 to 85_C
Symbol
V+ = 15 V, V- = -15 V VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
Typc
Mind Maxd Mind Maxd Unit
ID(off)
Channel On Leakage Current Lk C t
ID(on)
V+ = 16.5 V, V- = -16.5 V , VS = VD = "15.5 V 15 5
Digital Control
Input Current VIN Low Input Current VIN High IIL IIH Full Full 0.005 0.005 -0.5 -0.5 0.5 0.5 -0.5 -0.5 0.5 mA 0.5
Dynamic Characteristics
Turn-On Time Turn-Off Time Transition Time Break-Before-Make Time Delay Charge Injection Source Off Capacitance Drain Off Capacitance Channel On Capacitance tON tOFF tTRANS tD Q CS(off) f = 1 MHz, VS = 0 V CD(off) CD(on) DG417 DG418 DG417 DG418 DG419 RL = 300 W , CL = 35 pF VS = "10 V See Switching Ti S S it hi Time Test Circuit RL = 300 W , CL = 35 pF VS1 = "10 V VS2 = #10 V RL = 300 W , CL = 35 pF VS1 = VS2 = "10 V CL = 10 nF, Vgen = 0 V, Rgen = 0 W DG417 DG418 DG417 DG418 DG419 Room Full Room Full Room Full Room Room Room Room Room Room 13 60 8 8 30 35 5 100 60 175 250 145 210 175 250 5 pC 175 250 145 210 175 250 ns
DG419
pF pF
, f = 1 MHz, VS = 0 V
Power Supplies
Positive Supply Current Negative Supply Current Logic Supply Current Ground Current I+ I- IL IGND V 16 5 V+ = 16 5 V V- = -16.5 V 16.5 V, V VIN = 0 or 5 V Room Full Room Full Room Full Room Full 0.001 -0.001 0.001 -0.000 1 -1 -5 1 5 -1 -5 -1 -5 1 5 -1 -5 1 5 A mA 1 5
Document Number: 70051 S-52433--Rev. E, 06-Sep-99
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DG417/418/419
Vishay Siliconix
SPECIFICATIONSa FOR UNIPOLAR SUPPLIES
Test Conditions Unless Otherwise Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) IS = -10 mA, VD = 3.8 V V+ = 10.8 V Full Room 40 0 12 0 12 V W
A Suffix
-55 to 125_C
D Suffix
-40 to 85_C
Symbol
V+ V = 12 V V = 0 V V, V- VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
Typc
Mind Maxd Mind Maxd Unit
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Time Delay Charge Injection tON tOFF tD Q RL = 300 W , CL = 35 p , VS = 8 V pF, S S it hi Ti See Switching Time T t Circuit Test Ci it RL = 300 W , CL = 35 pF DG419 Room Room Room Room 110 40 60 5 pC ns
CL = 10 nF, Vgen = 0 V, Rgen = 0 W
Power Supplies
Positive Supply Current Negative Supply Current Logic Supply Current Ground Current I+ I- IL IGND V+ 13.2 V, V = 13 2 V VL = 5 25 V 5.25 VIN = 0 or 5 V Room Room Room Room 0.001 -0.001 0.001 -0.001 mA A
Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function.
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Document Number: 70051 S-52433--Rev. E, 06-Sep-99
DG417/418/419
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. VD and Supply Voltage
ID = -10 mA 40 30 "8 V 30 "10 V "12 V 20 "15 V r DS(on)( W ) r DS(on)( W ) 25_C -55_C 10 "5 V TA = 125_C
50
40
rDS(on) vs. Temperature
20
"20 V 10
0 -20 -15 -10 -5 0 5 10 15 20
0 -15 -10 -5 0 5 10 15
VD - Drain Voltage (V)
VD - Drain Voltage (V)
Leakage Currents vs. Analog Voltage
30 V+ = 15 V V- = -15 V VL = 5 V DG417/418: ID(off), IS(off) DG419: IS(off) 100 0 Q (pC) I (pA) 200
Drain Charge Injection
V+ = 16.5 V V- = -16.5 V VL = 5 V VIN = 0 V CL = 10 nF 1 nF
20
150
10
500 pF
50 -10 DG417/418: ID(on) DG419: ID(off), ID(on) 0
100 pF
-20
-30 -15 -10 -5 0 5 10 15
-50 -15 -10 -5 0 5 10 15
VD or VS - Drain or Source Voltage (V)
VS - Source Voltage (V)
Input Switching Threshold vs. Supply Voltages
3.5 3.0 2.5 V TH (V) 2.0 1.5 1.0 0.5 0 (V+) 5 10 15 20 25 30 35 40 VL = 5 V VL = 7 V
Document Number: 70051 S-52433--Rev. E, 06-Sep-99
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DG417/418/419
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Time vs. Temperature
120 V+ = 15 V, V- = -15 V VL = 5 V, VIN = 3 V Pulse tON 140 120 100 t ON , t OFF (ns) 80 (dB) tOFF 60 80 60 40 40 20 20 0 0 20 40 60 80 100 120 100 1k 10 k 100 k 1M 10 M 100 M V+ = 15 V V- = -15 V VL = 5 V DG419 Source 1 DG417/418/419 Source 2
Crosstalk and Off Isolation vs. Frequency
100
0 -55 -40 -20
Temperature (_C)
f - Frequency (Hz)
Switching Time vs. Supply Voltages
80 130 120 110 70 t ON , t OFF (ns) t ON , t OFF (ns) V- = 0 V VL = 5 V VIN = 3 V 60 tON 100
Switching Time vs. V+
tON 90 80 70 60 V- = 0 V VL = 5 V VIN = 3 V
50 tOFF 50 40 40 "10 30 "11 "12 "13 "14 "15 "16 10 11 12 13 14 15 16 Supply Voltage (V) V+ Supply Voltage (V) tOFF
Power Supply Currents vs. Switching Frequency
10 mA V+ = 15 V, V- = -15 V VL = 5 V, VIN = 5 V, 50% D Cycle 1 mA 10 nA I SUPPLY I SUPPLY 100 mA I+, I- 10 mA IL 10 pA 1 mA 1 pA 100 nA 100 1k 10 k 100 k 1M 10 M 0.1 pA -55 -40 1 nA 100 pA 1 mA 100 nA
Supply Current vs. Temperature
V+ = 16.5 V, V- = -16.5 V VL = 5 V, VIN = 0 V
I+, I-
IGND
-20
0
20
40
60
80
100
120
f - Frequency (Hz)
Temperature (_C)
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Document Number: 70051 S-52433--Rev. E, 06-Sep-99
DG417/418/419
Vishay Siliconix
TEST CIRCUITS
VO is the steady state output with the switch on. +5 V +15 V Logic Input VL "10 V S IN GND V- RL 300 W CL 35 pF V+ D 0V VO Switch Input VS VO 90% tOFF 3V 50%
tr <20 ns tf <20 ns
-15 V CL (includes fixture and stray capacitance) VO = VS RL RL + rDS(on)
Switch Output
0V tON
Note:
Logic input waveform is inverted for switches that have the opposite logic sense.
FIGURE 2. Switching Time (DG417/418)
+5 V
+15 V Logic Input 3V 0V D VO RL 300 W CL 35 pF VS1 = VS2 VO Switch Output CL (includes fixture and stray capacitance) -15 V 0V tD tD tr <20 ns tf <20 ns
VL VS1 VS2 S1 S2
V+
90%
IN GND V-
FIGURE 3. Break-Before-Make (DG419)
+5 V VL VS1 VS2 S1 S2 IN GND V- V+
+15 V 3V 50% 0V tTRANS VS1 V01 Switch Output VS2 V02 10% 90% tTRANS tr <20 ns tf <20 ns
D VO RL 300 W CL 35 pF
Logic Input
-15 V CL (includes fixture and stray capacitance) VO = VS RL RL + rDS(on)
FIGURE 4. Transition Time (DG419)
Document Number: 70051 S-52433--Rev. E, 06-Sep-99
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DG417/418/419
Vishay Siliconix
TEST CIRCUITS
+5 V +15 V DVO VO VO CL 10 nF V- INX OFF ON OFF
Rg
VL S IN
V+ D
g
3V GND
Q = DVO x CL
-15 V
FIGURE 5. Charge Injection
+5 V C VL VS Rg = 50 W S1
+15 V C +5 V V+ D C VL 50 W VS Rg = 50 W 0V, 2.4 V V- C IN RL S
V+
+15 V C
D
VO
VO
S2
RL 0.8 V
IN GND
GND
V-
C
-15 V XTALK Isolation = 20 log C = RF bypass VS VO
-15 V VS VO
Off Isolation = 20 log
FIGURE 6. Crosstalk (DG419)
FIGURE 7. Off Isolation
+5 V C VL VS Rg = 50 W 0V, 2.4 V IN GND S
+15 V C V+ D VO RL
V-
C
-15 V
FIGURE 8. Insertion Loss
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Document Number: 70051 S-52433--Rev. E, 06-Sep-99
DG417/418/419
Vishay Siliconix
TEST CIRCUITS
+5 V C VL
V+
+15 V +15 V C C NC
S
V+ S2 Meter
S1 Meter HP4192A Impedance Analyzer or Equivalent f = 1 MHz
DG417/418
0 V, 2.4 V IN HP4192A Impedance Analyzer or Equivalent C f = 1 MHz 0 V, 2.4 V
DG419
IN
D GND V-
D2 GND V-
D1 C
-15 V
-15 V
FIGURE 9. Source/Drain Capacitances
APPLICATIONS
Switched Signal Powers Analog Switch The analog switch in Figure 10 derives power from its input signal, provided the input signal amplitude exceeds 4 V and its frequency exceeds 1 kHz. This circuit is useful when signals have to be routed to either of two remote loads. Only three conductors are required: one for the signal to be switched, one for the control signal and a common return. A positive input pulse turns on the clamping diode D1 and charges C1. The charge stored on C1 is used to power the chip; operation is satisfactory because the switch requires less than 1 mA of stand-by supply current. Loading of the signal source is imperceptible. The DG419's on-resistance is a low 100 W for a 5-V input signal.
D1 V+ D Input S2 VL S1
C1 0.01 mF
VOUT
IN Control
RL2 10 kW
DG419
GND V-
RL1 10 kW
FIGURE 10. Switched Signal Powers Remote SPDT Analog Switch
Document Number: 70051 S-52433--Rev. E, 06-Sep-99
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DG417/418/419
Vishay Siliconix
"APPLICATIONS
(CONT'D)
Programmable Gain Amplifier
Micropower UPS Transfer Switch When VCC drops to 3.3 V, the DG417 changes states, closing SW1 and connecting the backup cell, as shown in Figure 11. D1 prevents current from leaking back towards the rest of the circuit. Current consumption by the CMOS analog switch is around 100 pA; this ensures that most of the power available is applied to the memory, where it is really needed. In the stand-by mode, hundreds of mA are sufficient to retain memory data. When the 5-V supply comes back up, the resistor divider senses the presence of at least 3.5 V, and causes a new change of state in the analog switch, restoring normal operation.
The DG419, as shown in Figure 12, allows accurate gain selection in a small package. Switching into virtual ground reduces distortion caused by rDS(on) variation as a function of analog signal amplitude.
GaAs FET Driver
The DG419, as shown in Figure 13 may be used as a GaAs FET driver. It translates a TTL control signal into -8-V, 0-V level outputs to drive the gate.
D1 VCC (5 V) R1 VSENSE 453 kW Memory D
V+
SW1
VL S + 3 V Li Cell - V-
DG417
IN
R2 383 kW
GND
FIGURE 11. Micropower UPS Circuit
+5 V
DG419
S1 S2 IN D
R1 R2 VL S1 S2 D VOUT V+ GaAs FET
VIN
- VOUT +
5V GND
DG419
V-
-8 V
FIGURE 12. Programmable Gain Amplifier
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FIGURE 13. GaAs FET Driver
Document Number: 70051 S-52433--Rev. E, 06-Sep-99
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